2SA1226 ,HIGH FREQUENCY AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDNEG _ . _ SILICON TRANSISTbR
"r;'rli'/'rC, __-__ e _r___te a F _ 23“ 226
"IWHNIEéWII-WIEEREQUEN ..
2SA1226-L ,Silicon transistorNEG _ . _ SILICON TRANSISTbR
"r;'rli'/'rC, __-__ e _r___te a F _ 23“ 226
"IWHNIEéWII-WIEEREQUEN ..
2SA1226-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
' 4. CHARACTERISTIC _ '. ' . TEST CONDITIONS
_ Collecto ..
2SA1227A , PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR
2SA1235A , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)
2SA1235A , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)
2SC3930 ,Small-signal deviceAbsolute Maximum Ratings T = 25°C 10˚aParameter Symbol Rating UnitCollector-base voltage (Emitter ..
2SC3931 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca10˚Parameter Symbol Rating UnitCollector-base voltage (Emitter o ..
2SC3934 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca10˚Parameter Symbol Rating UnitCollector-base voltage (Emitter o ..
2SC3936 ,Small-signal deviceAbsolute Maximum Ratings T = 25°C2.0±0.2aParameter Symbol Rating Unit10˚Collector-base voltage (Em ..
2SC3937 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3938GQL , Silicon NPN epitaxial planar type
2SA1226
