Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SA1225-Y |
TOSHIBH|TOSHIBA |
N/a |
13400 |
|
Driver Stage Amplifier Applications |
2SA1225-Y |
东芝|TOSHIBA |
N/a |
36700 |
|
Driver Stage Amplifier Applications |
2SA1225-Y |
TOSHIBA|TOSHIBA |
N/a |
2100 |
|
Driver Stage Amplifier Applications |
2SA1225-Y |
TOS|TOSHIBA |
N/a |
1314 |
|
Driver Stage Amplifier Applications |
2SA1225-Y(OY) TOSHIBA
2SA1225-Y , Driver Stage Amplifier Applications
2SA1226 ,HIGH FREQUENCY AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDNEG _ . _ SILICON TRANSISTbR
"r;'rli'/'rC, __-__ e _r___te a F _ 23“ 226
"IWHNIEéWII-WIEEREQUEN ..
2SA1226-L ,Silicon transistorNEG _ . _ SILICON TRANSISTbR
"r;'rli'/'rC, __-__ e _r___te a F _ 23“ 226
"IWHNIEéWII-WIEEREQUEN ..
2SA1226-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
' 4. CHARACTERISTIC _ '. ' . TEST CONDITIONS
_ Collecto ..
2SA1227A , PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR
2SC3929A ,Small-signal deviceFeatures• Low noise voltage NV• High forward current transfer ratio hFE1 2• S-Mini type package, al ..
2SC3930 ,Small-signal deviceAbsolute Maximum Ratings T = 25°C 10˚aParameter Symbol Rating UnitCollector-base voltage (Emitter ..
2SC3931 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca10˚Parameter Symbol Rating UnitCollector-base voltage (Emitter o ..