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2SA1221NECN/a3178avaiPNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS


2SA1221 ,PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERSDATA SHEETSILICON TRANSISTORS2SA1221, 1222PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY ..
2SA1225 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier ApplicationsApplications  High transition frequency: f = 100 MHz (typ.) T Complementary to 2SC2983 Maxi ..
2SA1225 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier Applications2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1225 Power Amplifier
2SA1225-Y , Driver Stage Amplifier Applications
2SA1225-Y , Driver Stage Amplifier Applications
2SA1225-Y , Driver Stage Amplifier Applications
2SC3929 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca2.0±0.2Parameter Symbol Rating Unit10˚2SC3929 V 35 VCollector-ba ..
2SC3929A ,Small-signal deviceFeatures• Low noise voltage NV• High forward current transfer ratio hFE1 2• S-Mini type package, al ..
2SC3930 ,Small-signal deviceAbsolute Maximum Ratings T = 25°C 10˚aParameter Symbol Rating UnitCollector-base voltage (Emitter ..
2SC3931 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca10˚Parameter Symbol Rating UnitCollector-base voltage (Emitter o ..
2SC3934 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca10˚Parameter Symbol Rating UnitCollector-base voltage (Emitter o ..
2SC3936 ,Small-signal deviceAbsolute Maximum Ratings T = 25°C2.0±0.2aParameter Symbol Rating Unit10˚Collector-base voltage (Em ..


2SA1221

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