2SA1201 ,Transistor Silicon PNP Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier ApplicationsApplications High voltage: V = −120 V CEO High transition frequency: f = 120 MHz (typ.) T ..
2SA1201-Y , PNP Silicon Power Transistors
2SA1201-Y , PNP Silicon Power Transistors
2SA1201-Y , PNP Silicon Power Transistors
2SA1202 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier ApplicationsApplications Suitable for driver of 30 to 35 watts audio amplifier Small flat package P ..
2SA1203 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier ApplicationsApplications Unit: mm Suitable for output stage of 3 watts amplifier Small flat package ..
2SC3897 ,Very High-Definition CRT Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta Cr-' 25°C unitColleetor-toBase Voltage VCBO 1500 VCo1leetoruto Emitt ..
2SC3899 , SWITCHING APPLICATIONS WITH BIAS RESISTANCE
2SC3900 ,Switching ApplicationsSANYO SEMICONDUCTOR CORP BEE D I 'i"i''i7ir71, 0007335 5 I28A1510, _ 7.3m28C3900 g 7135-”PN P/N FIN ..
2SC3901 ,PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORSOrdering numbeszN 2105APNP/ NPN Epitaxial Planar Silicon TransistorsSwitching Applications(with Bia ..
2SC3902 ,NPN Epitaxial Planar Silicon Transistors PNP/NPN Epitaxial Planar Silicon TransistorsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3904 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SA1201
Transistor Silicon PNP Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier Applications
2SA1201 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1201 Voltage Amplifier Applications
Power Amplifier Applications High voltage: VCEO = −120 V High transition frequency: fT = 120 MHz (typ.) Small flat package PC = 1 to 2 W (mounted on ceramic substrate) Complementary to 2SC2881
Maximum Ratings (Ta = 25°C) PC
Note 1: Mounted on ceramic substrate (250 mm2 × 0.8 t)
Unit: mm
Weight: 0.05 g (typ.)
