IC Phoenix logo

Home ›  2  › 27 > 2SA1201-Y

2SA1201-Y from Toshiba

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

0.000ms

2SA1201-Y

Manufacturer: Toshiba

PNP Silicon Power Transistors

Partnumber Manufacturer Quantity Availability
2SA1201-Y,2SA1201Y Toshiba 100000 In Stock

Description and Introduction

PNP Silicon Power Transistors The 2SA1201-Y is a PNP silicon transistor manufactured by Toshiba. Below are the key specifications:

- **Type**: PNP Silicon Transistor
- **Collector-Base Voltage (VCBO)**: -50V
- **Collector-Emitter Voltage (VCEO)**: -50V
- **Emitter-Base Voltage (VEBO)**: -5V
- **Collector Current (IC)**: -1.5A
- **Collector Dissipation (PC)**: 1W
- **Junction Temperature (Tj)**: 150°C
- **Storage Temperature (Tstg)**: -55°C to +150°C
- **DC Current Gain (hFE)**: 60 to 320 (at VCE = -6V, IC = -150mA)
- **Transition Frequency (fT)**: 80MHz (at VCE = -10V, IC = -50mA, f = 100MHz)
- **Package**: TO-92MOD

These specifications are based on Toshiba's datasheet for the 2SA1201-Y transistor.

Partnumber Manufacturer Quantity Availability
2SA1201-Y,2SA1201Y TOSH 1000 In Stock

Description and Introduction

PNP Silicon Power Transistors The 2SA1201-Y is a PNP silicon transistor manufactured by Toshiba. Here are the key specifications:

- **Type:** PNP
- **Material:** Silicon
- **Maximum Collector-Base Voltage (VCBO):** -50V
- **Maximum Collector-Emitter Voltage (VCEO):** -50V
- **Maximum Emitter-Base Voltage (VEBO):** -5V
- **Collector Current (IC):** -1.5A
- **Collector Dissipation (PC):** 1W
- **Junction Temperature (Tj):** 150°C
- **Storage Temperature (Tstg):** -55°C to +150°C
- **DC Current Gain (hFE):** 60 to 320 (depending on the operating conditions)
- **Transition Frequency (fT):** 80MHz
- **Package:** TO-92MOD

These specifications are typical for the 2SA1201-Y transistor and are based on the manufacturer's datasheet.

Partnumber Manufacturer Quantity Availability
2SA1201-Y,2SA1201Y TOS 700 In Stock

Description and Introduction

PNP Silicon Power Transistors The 2SA1201-Y is a PNP silicon transistor manufactured by Toshiba. Below are the key specifications from Ic-phoenix technical data files:

- **Type**: PNP silicon transistor
- **Manufacturer**: Toshiba
- **Package**: TO-92MOD
- **Collector-Base Voltage (VCBO)**: -50V
- **Collector-Emitter Voltage (VCEO)**: -50V
- **Emitter-Base Voltage (VEBO)**: -5V
- **Collector Current (IC)**: -1A
- **Collector Dissipation (PC)**: 1W
- **Junction Temperature (Tj)**: 150°C
- **Storage Temperature (Tstg)**: -55°C to +150°C
- **DC Current Gain (hFE)**: 60 to 320 (at VCE = -6V, IC = -150mA)
- **Transition Frequency (fT)**: 80MHz (at VCE = -10V, IC = -10mA, f = 100MHz)
- **Applications**: General-purpose amplification and switching

These specifications are based on Toshiba's datasheet for the 2SA1201-Y transistor.

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips