| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1162-GR |
TOS|TOSHIBA |
N/a |
1306 |
 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) |
| 2SA1162-GR |
TOSHIBA|TOSHIBA |
N/a |
115900 |
|
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) |
| 2SA1162-GR |
|
N/a |
293 |
|
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) |
2SA1162-GR TLSPF,T TOSHIBA
2SA1162-GR TE85L(SG) TOSHIBA
2SA1162GR(SG) TOSHIBA
2SA1162-GR(SG) TOSHIBA
2SA1162-GR(T5L,F,T) TOSHIBA
2SA1162-GR(T5L，T) TOSHIBA
2SA1162-GR(TE85L) TOSHIBA
2SA1162-GR/SG TOSHIBA
2SA1162-GR , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1162-O , PNP Silicon Plastic-Encapsulate Transistor
2SA1163 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage: V = −120 V CEO Excellent h linearity: h (I = −0.1 mA)/h ..
2SA1174 ,Conductor Products, Inc. - New Jersey Semi-Conductor Products,
2SA1175 ,PNP SILICON TRANSISTORFEATURES
0 Complementary to the NEC 2SC2785 NPN transistor.
ABSOLUTE MAXIMUM RATINGS
Maximum ..
2SC3838 , High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)
2SC3838K , High transition frequency. (Typ. fT= 1.5GHz) Small rbb.Cc and high gain. (Typ. 4ps)
2SC3838K , High transition frequency. (Typ. fT= 1.5GHz) Small rbb.Cc and high gain. (Typ. 4ps)
