| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1146 |
TOS|TOSHIBA |
N/a |
54 |
 |
Silicon PNP Power Transistors |
2SA114ES ROHM
2SA115 MIT
2SA1150-Y TOSHIBA
2SA1151 NEC
2SA1152 NEC
2SA1152-K NEC
2SA1152-L NEC
2SA1146 , Silicon PNP Power Transistors
2SA1153 ,PNP SILICON TRANSISTORFEATURES . High Frequency Current Gain. (0.204 MAX.)
q High Speed Switching.
0 Small Output Capac ..
2SA1156 ,PNP SILICON POWER TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL
hFE **
ton
-tstg
tf _
VCEO(SUS)
VCEX(SU ..
2SA1162 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage and high current: V = −50 V, I = −150 mA (max) CEO C Exce ..
2SA1162-GR , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SC3807 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsOrdering number:EN2018ANPN Epitaxial Planar Silicon Transistor2SC3807High h , Low-FrequencyFEGenera ..
2SC3807. ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsFeatures [2SC3807] · Large current capacity (I =2A).C · Adoption of MBIT process. · High DC current ..
2SC3810 ,NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 ° ° °C)° °PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITC ..
