| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1015-Y |
|
N/a |
9000 |
 |
PNP Silicon Plastic-Encapsulate Transistor |
| 2SA1015-Y |
HS |
N/a |
28590 |
|
PNP Silicon Plastic-Encapsulate Transistor |
| 2SA1015-Y |
BR |
N/a |
1000 |
|
PNP Silicon Plastic-Encapsulate Transistor |
| 2SA1015-Y |
TOS|TOSHIBA |
N/a |
2850 |
|
PNP Silicon Plastic-Encapsulate Transistor |
| 2SA1015-Y |
TOSHIBA|TOSHIBA |
N/a |
50000 |
|
PNP Silicon Plastic-Encapsulate Transistor |
| 2SA1015-Y |
TOSHIB|TOSHIBA |
N/a |
2490 |
|
PNP Silicon Plastic-Encapsulate Transistor |
| 2SA1015-Y |
FAIRCHILD|Fairchild Semiconductor |
N/a |
1140 |
|
PNP Silicon Plastic-Encapsulate Transistor |
2SA1015-Y(F) TOSHIBA
2SA1015-Y(F)
2SA1015-Y/GR TOSHIBA
2SA1015-Y-O TOSHIBA-PHIL
2SA1015-Y , PNP Silicon Plastic-Encapsulate Transistor
2SA1016 ,High-Voltage Low-Noise Amp ApplicationsOrderiné number: EN 5725No.572D( ):2SA1016,1016K
2SA1016-K ,High-Voltage Low-Noise Amp ApplicationsAbsolute Maximum Ratings at Ta=25°CCollector to Base VoltageCollector to Emitter VoltageEmitter to ..
2SA1018 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SA102 , Ge PNP Drift
2SC3642 ,Ultrahigh-Definition Display Horizontal Deflection Output ApplicationsOrdering number: EN1626?2803642NPN Triple Diffused Planar Silicon TransistorUltrahigh-Definition Di ..
2SC3644 ,Ultrahigh-Definition Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta =25°C unitCollector-to-Base Voltage V0130 1200 - VCollector-to-Emitt ..
2SC3646 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
