| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1013-Y |
TOS|TOSHIBA |
N/a |
50 |
 |
PNP Epitaxial Silicon Transistor |
| 2SA1013-Y |
FSC|Fairchild Semiconductor |
N/a |
6000 |
|
PNP Epitaxial Silicon Transistor |
2SA1015 ,Applications High voltage and high current: V = −50 V (min), CEO I = −150 mA (max) C Excellent h linearity : h = 80 (typ.) at V = −6 V, I = ..
2SA1015 TOSHIBA,Applications High voltage and high current: V = −50 V (min), CEO I = −150 mA (max) C Excellent h linearity : h = 80 (typ.) at V = −6 V, I = ..
2SA1015 TOSHITA,2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier
2SA1013-Y , PNP Epitaxial Silicon Transistor
2SA1015 ,PNP SILICON TRANSISTORApplications Unit: mmDriver Stage Amplifier
2SA1015-Y , PNP Silicon Plastic-Encapsulate Transistor
2SA1015-Y , PNP Silicon Plastic-Encapsulate Transistor
2SA1015-Y , PNP Silicon Plastic-Encapsulate Transistor
2SC3624 ,AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD‘NSILICONWTRANSISWT0RMS
ZSC3624, ZSC3624A
AUDIO FREQUENCY AMPLIFIER, SWITCHING
NPN SILICON E ..
2SC3624A ,AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta =
CHARACTERISTIC SYMBOL
2SC3624A-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta =
CHARACTERISTIC SYMBOL
