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2N7002PT
60 V, 310 mA N-channel Trench MOSFET
1. Product profile
1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified
1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm2.
2N7002PT
60 V, 310 mA N-channel Trench MOSFET
Rev. 1 — 2 July 2010 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tamb =25 C- - 60 V
VGS gate-source voltage Tamb =25 C- - 20 V drain current Tamb =25 C;
VGS =10V
[1] -- 310 mA
RDSon drain-source on-state
resistance =25 C;
VGS =10V; = 500 mA 1.6
NXP Semiconductors 2N7002PT
60 V, 310 mA N-channel Trench MOSFET
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Table 3. Ordering information2N7002PT SC-75 plastic surface-mounted package; 3 leads SOT416
Table 4. Marking codes2N7002PT Z1
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tamb =25 C- 60 V
VGS gate-source voltage Tamb =25 C- 20 V drain current VGS =10V [1]
Tamb =25 C- 310 mA
Tamb =100 C- 240 mA
IDM peak drain current Tamb =25 C;
single pulse;tp10s
-1.2 A
NXP Semiconductors 2N7002PT
60 V, 310 mA N-channel Trench MOSFET[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Ptot total power dissipation Tamb =25C [2] -250 mW
[1] -300 mW
Tsp =25 C- 770 mW junction temperature 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
Source-drain diode source current Tamb =25C [1] -310 mA
Table 5. Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).
NXP Semiconductors 2N7002PT
60 V, 310 mA N-channel Trench MOSFET
6. Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1]- 440 510 K/W
[2]- 360 415 K/W
Rth(j-sp) thermal resistance from
junction to solder point - 160 K/W
NXP Semiconductors 2N7002PT
60 V, 310 mA N-channel Trench MOSFETNXP Semiconductors 2N7002PT
60 V, 310 mA N-channel Trench MOSFET
7. Characteristics[1] Pulse test: tp 300 s; 0.01.
Table 7. Characteristics =25 C unless otherwise specified.
Static characteristicsV(BR)DSS drain-source breakdown
voltage =10 A; VGS=0V 60 --V
VGS(th) gate-source threshold
voltage =250 A; VDS =VGS 1.1 1.75 2.4 V
IDSS drain leakage current VDS =60V; VGS =0V =25C --1 A= 150C --10 A
IGSS gate leakage current VGS= 20 V; VDS=0V - - 100 nA
RDSon drain-source on-state
resistance
[1]
VGS =5V; ID =50mA - 1.3 2
VGS =10V; ID =500 mA - 1 1.6
gfs forward
transconductance
VDS =10V; ID= 200 mA [1]- 400 - mS
Dynamic characteristicsQG(tot) total gate charge ID =300 mA;
VDS =30V;
VGS =4.5V
-0.6 0.8 nC
QGS gate-source charge - 0.2 - nC
QGD gate-drain charge - 0.2 - nC
Ciss input capacitance VGS =0V; VDS =10V;
f=1MHz 3050pF
Coss output capacitance - 7 - pF
Crss reverse transfer
capacitance -pF
td(on) turn-on delay time VDD =50V; =250;
VGS =10V; =6 36ns rise time -4 -ns
td(off) turn-off delay time - 10 20 ns fall time - 5 - ns
Source-drain diodeVSD source-drain voltage IS =115 mA; VGS=0V 0.47 0.75 1.1 V
NXP Semiconductors 2N7002PT
60 V, 310 mA N-channel Trench MOSFETNXP Semiconductors 2N7002PT
60 V, 310 mA N-channel Trench MOSFET
