| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2N6576 |
MOT|Motorola |
N/a |
3500 |
 |
Bipolar NPN Device in a Hermetically sealed TO3 |
2N657S MOT
2N65LL-TN3-R UTC原厂, 2A, 650V N-CHANNEL POWER MOSFET
2N6576 , Bipolar NPN Device in a Hermetically sealed TO3
2N6609 ,COMPLEMENTARY SILICON POWER TRANSISTORS3h , DC CURRENT GAINV, VOLTAGE (VOLTS)V , COLLECTOR-EMITTER VOLTAGE (VOLTS) FECEV, VOLTAGE (VOLTS)V ..
2N6658 ,Conductor Products, Inc. - N-CHANNEL ENHANCEMENT MOSFET
2N6659 ,TMOS SWITCHING FET TRANSISTORSELECTRICAL CHARACTERISTICS (TA =. 25°C unless otherwise noted.).tmttrtttmtrlatittOFF CHARACTERISTIC ..
2N6660 ,TMOS SWITCHING FET TRANSISTORSMAXIMUM RATINGS2N6659 MPF6659thru thm2N6661 MPF66612N6659.60,61CASE TSAM, STYLE 6 'TO-39 (TOTZOSAD) ..
2SC3099 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure 2 NF = 1.7dB, |S | = 15dB (f = 500 MHz) 21e2 NF = 2 ..
2SC3110 ,Si NPN Epitaxial PlanarAbsolute Maximum Ratings (Ta=25°C)Item Symbol Value Unit2le 77 .-s'-ztitrdE cho 15 Vc::jpf.cr.:iss, ..
2SC3112 ,Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching ApplicationsApplications Unit: mm High DC current gain h = 600~3600 : FE High breakdown voltage: V = 50 ..
