| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2N6565 |
MOT|Motorola |
N/a |
21 |
 |
0.8 to 110 Amperes RMS 15 to 1200 Volts |
| 2N6565 |
FAI|Fairchild Semiconductor |
N/a |
1000 |
|
0.8 to 110 Amperes RMS 15 to 1200 Volts |
| 2N6565 |
MIT |
N/a |
1000 |
|
0.8 to 110 Amperes RMS 15 to 1200 Volts |
2N657 ,Conductor Products, Inc. - NPN SILICON PLANAR TRANSISTOR
2N657 FSC,Conductor Products, Inc. - NPN SILICON PLANAR TRANSISTOR
2N6565 , 0.8 to 110 Amperes RMS 15 to 1200 Volts
2N6576 , Bipolar NPN Device in a Hermetically sealed TO3
2N6609 ,COMPLEMENTARY SILICON POWER TRANSISTORS3h , DC CURRENT GAINV, VOLTAGE (VOLTS)V , COLLECTOR-EMITTER VOLTAGE (VOLTS) FECEV, VOLTAGE (VOLTS)V ..
2N6658 ,Conductor Products, Inc. - N-CHANNEL ENHANCEMENT MOSFET
2N6659 ,TMOS SWITCHING FET TRANSISTORSELECTRICAL CHARACTERISTICS (TA =. 25°C unless otherwise noted.).tmttrtttmtrlatittOFF CHARACTERISTIC ..
2SC3098 ,Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure 2 NF = 2.5dB, |S | = 14.5dB (f = 500 MHz) 21e2 NF = ..
2SC3099 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure 2 NF = 1.7dB, |S | = 15dB (f = 500 MHz) 21e2 NF = 2 ..
2SC3110 ,Si NPN Epitaxial PlanarAbsolute Maximum Ratings (Ta=25°C)Item Symbol Value Unit2le 77 .-s'-ztitrdE cho 15 Vc::jpf.cr.:iss, ..
