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Partno	Mfg	Dc	Qty	Available	Descript
2N6489	MOT|Motorola	N/a	1100		Conductor Products, Inc. - SILICON N-P-N AND P-N-P EPITAXIAL-BASE VERSAWATT TRANSISTORS
2N6489	ST|ST Microelectronics	N/a	72		Conductor Products, Inc. - SILICON N-P-N AND P-N-P EPITAXIAL-BASE VERSAWATT TRANSISTORS

2N6490 ST,NPN/PNP PLASTIC POWER TRANSISTORS
2N6489 ,Conductor Products, Inc. - SILICON N-P-N AND P-N-P EPITAXIAL-BASE VERSAWATT TRANSISTORS
2N6491 ,NPN/PNP PLASTIC POWER TRANSISTORSELECTRICAL CHARACTERISTICS (T = 25
C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
2N6491 ,NPN/PNP PLASTIC POWER TRANSISTORS
ON SemiconductorNPNComplementary Silicon Plastic2N6487Power Transistors*2N6488. . . designed for u ..
2N6491G , 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60−80 VOLTS, 75 WATTS
2N6497 ,HIGH VOLTAGE NPN SILICON POWER TRANSISTORS2t, TIME μ (s)2N64971.00.7D = 0.50.50.30.20.20.1P(pk)0.050.1R = 1.56 °C/WθJC(max)0.07 0.02D CURVE ..
2SC3068 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3069 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3070 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..