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Partno	Mfg	Dc	Qty	Available	Descript
2N6232	GS	N/a	98		COLLECTOR CURRENT = 10 AMPS NPN TYPES

2N6247 MOT, Bipolar PNP Device in a Hermetically sealed TO3 Metal Package
2N6255 MSC, RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
2N6264 ASI,Conductor Products, Inc. - ELECTRICAL CHARACTERISTICS
2N6270 ON, Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
2N6232 , COLLECTOR CURRENT = 10 AMPS NPN TYPES
2N6277 ,NPN TransistorMAXIMUM RATINGS(1)(TO–3)Rating Symbol 2N6274 2N6275 2N6277 UnitCollector–Base Voltage V 120 140 180 ..
2N6282 ,DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORSTHERMAL CHARACTERISTICS(TO–3)ÎÎÎÎÎCharacteristic Symbol Max UnitÎÎÎThermal Resistance, Junction to ..
2N6284 ,DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORSELECTRICAL CHARACTERISTICS (T = 25
C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
2N6286 ,DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS3r(t), EFFECTIVE TRANSIENTTHERMAL RESISTANCE (NORMALIZED)t, TIME μ (s)2N6283 2N6284 2N6286 2N6287 ..
2SC3039 ,POWER TRANSISTORS(7.0A,400V,50W)Absolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3042 ,NPN Triple Diffused Planar Silicon Transistor 400V/12A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3052 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE