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2N6071A.-2N6075A-2N6075B Fast Delivery,Good Price
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Partno Mfg Dc Qty AvailableDescript
2N6071A. |2N6071AONN/a473avaiTRIACs 4 AMPERES RMS 200 thru 600 VOLTS
2N6075AONN/a200avaiLeaded Thyristor TRIAC
2N6075BONN/a4788avaiSensitive Gate Triacs


2N6075B ,Sensitive Gate TriacsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value Unit*Peak Repetitive Off-Stat ..
2N6076 ,Leaded Small Signal Transistor General Purpose
2N6076 ,Leaded Small Signal Transistor General Purpose
2N6076 ,Leaded Small Signal Transistor General Purpose
2N6082 ,NPN Silicon RF Power TransistorsMAXIMUM RATINGS imam FRating Symbol Valu- Unh d COLLECTORs-coluretor-Emitter Voltage VCEO 18 VdcCol ..
2N6099 ,Conductor Products, Inc. - SILICON NPN POWER TRANSISTORS
2SC2996 ,Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, Local, IF High Frequency Amplifier ApplicationsApplications  High stability oscillation voltage on FM local oscillator  Recommend FM/AM RF, ..
2SC2999 ,NPN Epitaxial Planar Silicon Transistor HF Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3000 ,NPN Epitaxial Planar Silicon Transistor HF Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3001 , NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2SC3011 ,Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications2SC3011 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3011 UHF~C Band Low Noise Ampli ..
2SC3011 ,Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier ApplicationsApplications Unit: mm 2 High gain: |S | = 12dB (typ.) 21e Low noise figure: NF = 2.3dB (typ.) ..


2N6071A.-2N6075A-2N6075B
Sensitive Gate Triacs
2N6071A/B Series
Preferred Device

Sensitive Gate T riacs
Silicon Bidirectional Thyristors

Designed primarily for full-wave AC control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
Features
Pb−Free Package is Available* Sensitive Gate Triggering Uniquely Compatible for Direct Coupling
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit
Logic Functions Gate Triggering: 4 Mode − 2N6071A, B; 2N6073A, B; 2N6075A, B Blocking Voltages to 600 V All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability• Small, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability• Device Marking: Device Type, e.g., 2N6071A, Date Code
*For additional information on our Pb−Free strategy and soldering details, please
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