IC Phoenix
 
Home ›  225 > 2N6058-2N6059,DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS
2N6058-2N6059 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
2N6058STN/a839avaiDARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS
2N6059ONN/a71avaiDARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS


2N6058 ,DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORSTHERMAL CHARACTERISTICSCharacteristic Symbol Rating UnitÎÎÎThermal Resistance, Junction to Case R 1 ..
2N6059 ,DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORSAPPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIALEQ ..
2N6059 ,DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS2N6059®SILICON NPN POWER DARLINGTON TRANSISTOR■ STMicrolectronics PREFERREDSALESTYPE■ HIGH GAIN■ N ..
2N6059 ,DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORSOrder this document**by 2N6052/DSEMICONDUCTOR TECHNICAL DATA** ** **"* **!** *. . . designed for ..
2N6070A ,Conductor Products, Inc. - PEEK GATE TRIGGER CURRENT
2N6071 ,TRIACs 4 AMPERES RMS 200 thru 600 VOLTSTHERMAL CHARACTERISTICSCharacteristic Symbol Max Unit*Thermal Resistance, Junction to Case R 3.5 °C ..
2SC2951 , The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz.
2SC2952 , The 2SC2592 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications.
2SC2954 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDDATA SHEETDATA SHEETSILICON TRANSISTOR2SC2954NPN SILICON EPITAXIAL TRANSISTORPOWER MINI MOL ..
2SC2954-T1 ,For amplify high frequency, low noise, and wide band.DATA SHEETDATA SHEETSILICON TRANSISTOR2SC2954NPN SILICON EPITAXIAL TRANSISTORPOWER MINI MOL ..
2SC2958 ,Silicon transistorDATA SHEETSILICON TRANSISTORS2SC2958, 2959NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY ..
2SC2959 ,Silicon transistorDATA SHEETSILICON TRANSISTORS2SC2958, 2959NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY ..


2N6058-2N6059
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS
"! .. designed for general–purpose amplifier and low frequency switching applications. High DC Current Gain —hFE = 3500 (Typ) @ IC = 5.0 Adc Collector–Emitter Sustaining Voltage — @ 100 mA
VCEO(sus) = 80 Vdc (Min) — 2N6058
VCEO(sus) = 100 Vdc (Min) — 2N6052, 2N6059 Monolithic Construction with Built–In Base–Emitter Shunt Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
(1) Indicates JEDEC Registered Data.
1600 25 50 75 100 125 150 200
Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)
, POWER DISSIP
TION (W
TTS) 120
Preferred devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6052/D
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED