2N6041 ,DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORSMAXIMUM RATINGS (1)2N6040 2N6041 2N6042DARLINGTONÎÎ2N6043 2N6044 2N6045Rating Symbol Unit8 AMPERECO ..
2N6041. ,DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORSTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitÎÎÎ Thermal Resistance, Junction to CaseÎÎÎ θÎ ..
2N6043 ,DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
2N6043 ,DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
2N6044 ,DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORSTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitÎÎÎ Thermal Resistance, Junction to CaseÎÎÎ θÎ ..
2N6045 ,DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
2SC2923 ,Power TransistorMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SC2925 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC2944 ,TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHINGApplications _.
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. h5-5ie, aWrreta'tlt'M Colour & B/W TV power supply "?of‘ gig ..
2SC2946 ,NPN SILICON EPITAXIAL TRANSISTOR MP-3applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C)
Base
Collector
Emitter
Collector
..
2SC2951 , The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz.
2SC2952 , The 2SC2592 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications.
2N6041-2N6041.-2N6044
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
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! .. designed for general–purpose amplifier and low–speed switching applications. High DC Current Gain —
hFE = 2500 (Typ) @ IC = 4.0 Adc Collector–Emitter Sustaining Voltage — @ 100 mAdc —
VCEO(sus) = 60 Vdc (Min) — 2N6040, 2N6043
VCEO(sus) = 80 Vdc (Min) — 2N6041, 2N6044
VCEO(sus) = 100 Vdc (Min) — 2N6042, 2N6045 Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc — 2N6040,41, 2N6043,44
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc — 2N6042, 2N6045 Monolithic Construction with Built–In Base–Emitter Shunt Resistors
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(1) Indicates JEDEC Registered Data.0 20 40 60 80 100 120 160
Figure 1. Power DeratingT, TEMPERATURE (°C)
, POWER DISSIP
TION (W
TTS)
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6040/D
*Motorola Preferred Device
