2N6028RLRA ,Programmable UJT22N6027, 2N6028I+VAB VR1 R2 AI R =A GAR1 + R2R2G +–VR1 PV– V = V SS BR1 + R2R V = V – VG T P SVVAKR ..
2N6034 ,Leaded Power Transistor DarlingtonABSOLUTE MAXIMUM RATINGS
PNP 2N60342N6035 2N6036 .
Symbol Parameter NPN 2N60372N60382N6039 Unit
..
2N6035 ,Leaded Power Transistor Darlington
2N6036 ,Leaded Power Transistor Darlington2N60362N6039®COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS■ 2N6036 IS A STMicroelectronicsPREFE ..
2N6036. ,Leaded Power Transistor Darlington2N60362N6039®COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS■ 2N6036 IS A STMicroelectronicsPREFE ..
2N6036G , Plastic Darlington Complementary Silicon Power Transistors
2SC2904 , NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2SC2909 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching AF 60W Predriver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC2910 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Audio 80W Output Predriver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC2911 ,NPN Epitaxial Planar Silicon Transistors 160V/140mA High-Voltage Switching and AF 100W Predriver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC2923 ,Power TransistorMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SC2925 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2N6027-2N6028-2N6028RLRA
Programmable Unijunction Transistor
-
Preferred Device-
Programmable Unijunction
Transistor TriggersDesigned to enable the engineer to “program’’ unijunction
characteristics such as RBB, η, IV, and IP by merely selecting two
resistor values. Application includes thyristor–trigger, oscillator, pulse
and timing circuits. These devices may also be used in special thyristor
applications due to the availability of an anode gate. Supplied in an
inexpensive TO–92 plastic package for high–volume requirements,
this package is readily adaptable for use in automatic insertion
equipment. Programmable — RBB, η, IV and IP Low On–State V oltage — 1.5 V olts Maximum @ IF = 50 mA Low Gate to Anode Leakage Current — 10 nA Maximum High Peak Output V oltage — 11 Volts Typical Low Offset Voltage — 0.35 Volt Typical (RG = 10 k ohms) Device Marking: Logo, Device Type, e.g., 2N6027, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)*Indicates JEDEC Registered Data
(1) Anode positive, RGA = 1000 ohms
Anode negative, RGA = open
