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2N5952NSCN/a1000avaiLeaded JFET General Purpose


2N5952 ,Leaded JFET General Purpose
2N5953 ,SFET RF/VHF/ UHF/ Amplitiers
2N5953 ,SFET RF/VHF/ UHF/ Amplitiers
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2N5952
Leaded JFET General Purpose
2N5952 2N5952 N-Channel RF Ampifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings * T =25°C unless otherwise noted C Symbol Parameter Value Units V Drain-Gate Voltage 30 V DG V Gate-Source Voltage -30 V GS I Forward Gate Current 10 mA GF T , T Operating and Storage Junction Temperature Range -55 ~ +150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Gate-Source Breakdown Voltage V = 0, I = -1.0μA-30 V (BR)GSS DS G I Gate Reverse Current V = -15V, V = 0 -1.0 nA GSS GS DS V Gate-Source Cutoff Voltage V = 15V, I = 100nA -1.3 -3.5 V GS(off) DS D On Characteristics I Zero-Gate Voltage Drain Current * V = 15V, V = 0 4.0 8.0 mA DSS DS GS Small Signal Characteristics g Forward Transfer Conductance V = 15V, V = 0, f = 1.0kHz 2000 6500 μmhos fs DS GS g Output Conductance V = 15V, V = 0, f = 100MHz 75 μmhos os DS GS C Input Capacitance V = 15V, V = 0, f = 1.0MHz 6.0 pF iss DS GS C Reverse Transfer Capacitance V = 15V, V = 0, f = 1.0MHz 2.0 pF rss DS GS NF Noise Figure V = 15V, R = 1.0kΩ, 2.0 dB DS G f = 1.0kHz * Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 1.0% Thermal Characteristics T =25°C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 350 mW D Derate above 25°C 2.8 mW/°C R Thermal Resistance, Junction to Case 125 °C/W θJC R Thermal Resistance, Junction to Ambient 357 °C/W θJA ©2002 Rev. A, June 2002
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