2N5886 ,COMPLEMENTARY SILICON HIGH-POWER TRANSISTORSAPPLICATIONS ■ GENERAL PURPOSE SWITCHING ANDAMP ..
2N5908 ,MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIERG E SOLID STATE " DE 3lV?5Clly1, nunnna l r
~L‘7-17
I
O
a 2NS902-2NS909 1'lliilillMEiii'it,nl ..
2N5909 ,MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIERFEATURES ABSOLUTE MAXIMUM RATINGS
g . Tight Tracklng (T A=25°C unless otherwise sptimifod)
N q Go ..
2N5909 ,MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIERFEATURES ABSOLUTE MAXIMUM RATINGS
g . Tight Tracklng (T A=25°C unless otherwise sptimifod)
N q Go ..
2N5911 ,Dual N-Channel JFET High Frequency AmplifierFEATURES
. Tight Tracking
. Low Insertion Loss
. Good Matchlng
PIN CONFIGURATION
To-ss ..
2N5911 ,Dual N-Channel JFET High Frequency AmplifierS-04031—Rev. D, 04-Jun-018-12N5911/5912Vishay Siliconix ..
2SC2881 ,Transistor Silicon NPN Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier ApplicationsApplications High voltage: V = 120 V CEO High transition frequency: f = 120 MHz (typ.) T ..
2SC2881 ,Transistor Silicon NPN Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier Applications2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier
2SC2882 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier ApplicationsApplications Suitable for driver of 30 to 35 watts audio amplifier Small flat package P ..
2SC2883 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSApplications Unit: mm Suitable for output stage of 3 watts amplifier Small flat package ..
2SC2884 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSApplications Unit: mm High DC current gain: h = 100 to 320 FE Suitable for output stage of ..
2SC2884 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2884 Audio Frequency Amp ..
2N5886
COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS
2N5886HIGH CURRENT SILICON NPN POWER TRANSISTOR STMicroelectronics PREFERRED
SALESTYPE HIGH CURRENT CAPABILITY
APPLICATIONS GENERAL PURPOSE SWITCHING AND
AMPLIFIER LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION The 2N5886 is a silicon Epitaxial-Base NPN
power transistor mounted in Jedec TO-3 metal
case. It is inteded for use in power linear
amplifiers and switching applications.
January 2000
ABSOLUTE MAXIMUM RATINGS1/4
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
2N58862/4
2N5886
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
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2N58864/4
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