2N5831 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6)
SYMBOL CHA ..
2N5880 ,Conductor Products, Inc. - COMPLEMENTARY SILICON POWER TRANSISTORS
2N5884 ,COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS3t, TIME μ (s)PNP 2N5883, 2N5884*, NPN 2N5885, 2N5886*1.0D = 0.50.50.20.20.1P(pk) (t) = r(t) J ..
2N5884 ,COMPLEMENTARY SILICON HIGH-POWER TRANSISTORSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Max UnitÎÎÎÎ ..
2N5886 ,COMPLEMENTARY SILICON HIGH-POWER TRANSISTORSAPPLICATIONS ■ GENERAL PURPOSE SWITCHING ANDAMP ..
2N5908 ,MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIERG E SOLID STATE " DE 3lV?5Clly1, nunnna l r
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a 2NS902-2NS909 1'lliilillMEiii'it,nl ..
2SC2878-A , For Muting and Switching Applications
2SC2878-B , For Muting and Switching Applications
2SC2881 ,Transistor Silicon NPN Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier ApplicationsApplications High voltage: V = 120 V CEO High transition frequency: f = 120 MHz (typ.) T ..
2SC2881 ,Transistor Silicon NPN Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier Applications2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier
2SC2882 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier ApplicationsApplications Suitable for driver of 30 to 35 watts audio amplifier Small flat package P ..
2SC2883 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSApplications Unit: mm Suitable for output stage of 3 watts amplifier Small flat package ..
2N5831
NPN small signal high voltage general purpose amplifier.
