| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2N5551S |
KEC |
N/a |
30000 |
 |
EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE) |
2N5551S-RTK KEC
2N5551S-RTK/P KEC
2N5551S-RTK/P T KEC
2N5551Y FSC
2N5551-Y FSC
2N5551-Y SEC
2N5551S , EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)
2N5551YBU , NPN General-Purpose Amplifier
2N5555 ,Leaded JFET General Purpose
2N5555 ,Leaded JFET General Purpose
2N5555 ,Leaded JFET General Purpose
2SC2814 ,NPN Epitaxial Planar Silicon Transistor High-Friquency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC2824 ,SILICON NPN EPITAXIAL TYPE(PCT PROCESS)TOSHIBA tIyTSCRETE/0PT()1ft097250 TOSHIBA (D I SCRETE/OPTO)SILICON NPN EPITAXIALTYPE (PCT PROCESS)1 ..
2SC2833 ,Si NPN triple diffused. High speed switching.Absolute Maximum Ratings (Ta=25°C)T'"-'-Unit 1 mmHe; . 15.5max. 4.7-H 13 5 ' . max.I . max.3. l11.0 ..
