2N5550 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2N5550S , EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)
2N5551RLRAG , Amplifier Transistors NPN Silicon
2N5551RLRPG , Amplifier Transistors NPN Silicon
2N5551S , EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)
2N5551YBU , NPN General-Purpose Amplifier
2SC2810 , Silicon NPN Power Transistors
2SC2810 , Silicon NPN Power Transistors
2SC2810. , Silicon NPN Power Transistors
2SC2812 , 2SA1179 PNP/NPN Transistor
2SC2812 , 2SA1179 PNP/NPN Transistor
2SC2814 ,NPN Epitaxial Planar Silicon Transistor High-Friquency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2N5550
Small Signal Amplifier NPN
2N5550, 2N5551
Preferred DeviceAmplifier T ransistors
NPN Silicon
Features Pb−Free Packages are Available* Device Marking: Device Type, e.g., 2N5550, Date Code
MAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS*For additional information on our Pb−Free strategy and soldering details, please
