2N5461 ,Leaded JFET General PurposeS-04030—Rev. D, 04-Jun-019-4r – Drain-Source On-Resistance ( Ω ) I – Drain Current (mA)g – Forward ..
2N5461RLRA ,Small Signal JFET P-ChannelMAXIMUM RATINGS3Rating Symbol Value UnitGATEDrain − Gate Voltage V 40 VdcDGReverse Gate − Source Vo ..
2N5462 ,Leaded JFET General Purpose
2N5462 ,Leaded JFET General Purpose
2N5462 ,Leaded JFET General Purpose
2N5463 , N-CHANNEL JFET
2SC2785 ,NPN SILICON TRANSISTORFEATURES . High Voltage VCEO : 50 v MIN. (0.1-55%., (0,8326%qu
0 Excellent hFE Linearity : 0.92 TY ..
2SC2786 ,NPN SILICON TRANSISTORFEATURES q High gain bandwidth product (fT = 600 MHz TYP.) io.yistlili., (053.5%,
. Small output c ..
2SC2786 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °c)
SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS
..
2SC2787 ,NPN SILICON TRANSISTORFEATURES .0 Small output capacitance (Cob = 1.9 pF TYP.) ah2sstyi.) (0.356%?)6.)
q Low noise figur ..
2SC2792 ,Silicon NPN Power Transistors TO-3P(I) packageELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC2792 ,Silicon NPN Power Transistors TO-3P(I) packageapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2N5460-2N5461-SST5460
Leaded JFET General Purpose
2N/SST5460 Series
Vishay Siliconix
P-Channel JFETs
2N5460 SST5460
2N5461 SST5461
2N5462 SST5462�������� �������� ������������ High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 �A Low Capacitance: 1.2 pF Typical Low Signal Loss/System Error High System Sensitivity High-Quality Low-Level Signal
Amplification Low-Current, Low-Voltage Amplifiers High-Side Switching Ultrahigh Input Impedance
Pre-Amplifiers
�����������
The 2N/SST5460 series are p-channel JFETs designed to
provide all-around performance in a wide range of amplifier
and analog switch applications.
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), plastic packages provide low cost options, and are
available in tape-and-reel for automated assembly, (see
Packaging Information).
TO-226AA
(TO-92)Top View
TO-236
(SOT-23) SST5460 (B0)*
SST5461 (B1)*
SST5462 (B2)*
*Marking Code for TO-236
Top View
2N5460
2N5461
2N5462
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Gate-Drain Voltage 40 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Source Voltage 40 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current –10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature –65 to 150�C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150�C. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300�C. . . . . . . . . . . . . . . . . . .
Power Dissipationa 350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes Derate 2.8 mW/�C above 25�C
