SST4416 ,Low Noise/High FrequencyS-04028—Rev. F, 04-Jun-017-4I – Drain Current (mA) I – Drain Current (mA)D Dg – Forward Transconduc ..
SST45LF010-10-4C-QA , 1 Megabit Serial Flash
SST45LF010-10-4C-SA , 1 Megabit Serial Flash
SST45LF010-10-4C-SA , 1 Megabit Serial Flash
SST45VF512-10-4C-SA , 512 Kbit / 1 Mbit / 2 Mbit Serial Flash
SST49LF002A-33-4C-NH , 2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
STK3102III ,2-Channel Voltage Amplifier for 90 to 100W AF Power Amplifier (Dual Supplies)SANYO SEMICONDUCTOR CORP " D " ?‘197075 001].“in [JTLI ITSAJSTK Audio Power AmplifierSTK3042 Ill) S ..
STK311-010 ,RDS Demodulation + Synchronization and Error CorrectionOrdering number : EN4374AThick-Film Hybrid ICSTK311-010RDS Demodulation + Synchronization and Error ..
STK311-120 ,RDS DemodulatorOrdering number: EN 5023Thick Film Hybrid ICSTK31 1 -120No. 5023RDS D'emodulatorOverview Package Di ..
STK3152III ,2-Channel Voltage Amplifier for 80 to 90W power Amplifier (Dual Supplies)SANYO SEMICONDUCTOR CORP " D " ?‘197075 001].“in [JTLI ITSAJSTK Audio Power AmplifierSTK3042 Ill) S ..
STK350-010 ,Thick Film Hybrid IC 2-Channel AF Voltage Amplifier (60 to 80W/channel supported)Ordering number:ENN5018Thick Film Hybrid ICSTK350-0102-Channel AF Voltage Amplifier(60 to 80W/chann ..
STK350-030 ,2-Channel AF Voltage Amplifier (90 to 100W/channel supported)Features9.053.0• Split power supply for wide bandwidth (f=20Hz to20kHz).• Member of a family of dev ..
2N4416-2N4416A-SST4416
N-Channel JFET High Frequency Amplifier
VISHAY
2N4416/2N4416A/SST4416
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number VGS(°ff) (V) V(BR)GSS Min (V) gfs Min (mS) loss Min (mA)
2N4416 -s6 -30 4.5 5
2N4416A -2.5 to -6 -35 4.5 5
SST4416 -s6 -30 4.5 5
FEATURES BENEFITS APPLICATIONS
q Excellent High-Frequency Gain: q VWdeband High Gain q High-Frequency Amplifier/Mixer
2N4416/A, Gps 13 dB (typ) @
400 MHz
q Very Low Noise: 3 dB (typ) @
400 MHz
q Very Low Distortion
0 High AC/DC Switch Off-Isolation
DESCRIPTION
The 2N4416/2N4416A/SST4416 n-channel JFETs are
designed to provide high-performance amplification at high
frequencies.
TO-206AF
(TO-72)
Top View
2N4416
2N4416A
For applications information see AN104.
q Very High System Sensitivity
q High Quality of AmpliMation
o High-Speed Switching Capability
q High Low-Level Signal Amplification
. Oscillator
. Sample-and-Hold
. Very Low Capacitance Switches
The TO-206AF (TO-72) hermetically-sealed package is
available with full military processing (see Military
Information.) The TO-236 (SOT-23) package provides a
Iow-cost option and is available with tape-and-reel options
(see Packaging Information). For similar products in the
TO-226AA (TO-92) package, see the J304/305 data sheet.
TO-236
(SOT-23)
Top View
SST4416 (H1)*
*Marking Code for TO-236
Document Number: 70242
S-04028-Rev. F, 04-Jun-01
www.vishay.com
2N4416l2N4416AlSST4416
VISHAY
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage : Operating Junction Temperature ......................... -55 to 150 "C
((i)is41Tu14)1/.'.) . , , , , , , , , , , , , , , , , , , , C". :ggx Power Dissipation : (2N Premoa ...................... 300 mW
(SST Premt)h .................... 350 mW
Gate Current ................................................. 10 mA
Lead Temperature ........................................... 300 "C N otes
Storage Temperature : (2N Prefix) .................. -65 to 200 °C a. Derate 2.4 mW/°C above 25°C
(SST Prefix) ................. -65 to 150°C b, Derate 2.8 le°C above 25''C
SPECIFICATIONS (TA = 25°C UNLESS NOTED)
Limits
2N4416 2N4416A SST4416
Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit
Static
Gate-Source - -
Breakdown Voltage V(BR)GSS ks - -1 ”A , VDS - O V -36 -30 -35 -30 V
Gate-Source Cutoff Voltage Vsson Vos = 15 V, ID = 1 nA -3 A, -2.5 -6
Saturation Drain Currentb loss Vos = 15 V, VGS = 0 V 10 5 15 5 15 5 15 mA
VGS = -20 V, Vos = 0 V (2N) -2 -100 -100 pA
I TA=150°C -4 -100 -100
Gate Re e se C rent I
V r ur GSS Vss = -15 v, VDS = o v (SST) 4.002 -1 nA
TA = 125°C -0.6
Gate Operating Current IG VDG = 10 V, ID = 1 mA -20
Drain Cutoff CurrentC Imam VDS = 10 v, VGS = -6 v 2 p
Drain-Source On-Resistancec rDS(on) VGS = O V, ID = 1 mA 150 Q
Gate-Source - -
Forward Voltagec VGS(F) ks - 1 mA , VDS - 0 V 0.7 V
Dynamic
Common-Source g 6 4 5 7 5 4 5 7 5 4 5 7 5 mS
Forward Transconductanceb fs Vos = 15 V, VGS = 0 V . . . . . .
Common-Source f= 1 kHz
Output Conductance" Jos 15 50 50 50 ws
Common-Source
Input Capacitance Ciss 2.2 4 4
Common-Source Vos = 15 V, VGs = 0 V
Reverse Transfer Capacitance Crss f= 1 MHz 0.7 0.8 (h8 pF
Common-Source
Output Capacitance Coss 1 2 2
Equivalent Input 6 VDS = 10 V, VGS - 0 V 6 ny
Noise Voltages n f = 1 kHz \le
www.vishay.com
Document Number: 70242
S-04028-Reu. F, 04-Jun-01
VISHAY
2N4416I2N4416A/SST4416
Vishay Siliconix
HIGH-FREQUENCY SPECIFICATIONS FOR 2N441 6/2N441 6A (TA = 25°C UNLESS NOTED)
Limits
100 MHz 400 MHz
Parameter Symbol Test Conditions Min Max Min Max Unit
Common Source Input Conductance giss 100 1,000
Common Source Input Susceptance biss 2,500 10,000
Common Source Output Conductance goss VDS = 15 V, Vss = 0 V 75 100 ws
Common Source Output Susceptance boss 1,000 4,000
Common Source Forward Transconductance gfs 4,000
Common-Source Power Gain Gps VDS = 15 V, ID = 5 mA 18 10 dB
Noise Figure NF l RG = 1 KO 2 4
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NH
b. Pulse test: PW s300 us duty cycle s3%.
c, This parameter not registered with JEDEC.
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage vs. Gate-Source Cutoff Voltage
500 100
bss@1hos--10V,VGs--0V
gis@VDs=10V,N/Gs=0V
IDSS — Saturation Drain Current (mA)
(3w) aauelonpuoosueu pJENUOj — 516
rDSmn) — Drain—Source On—Resistance ( Q )
rrvs@ b=1mA,Vss=0V
gos@VDS=10V,Vss=0V
400 f=1kHz 80
300 60
200 40
(311) aouepnpuoo 1nd1no — 905
100 20
f = 1 kHz
o -2 -4 -6 -8 -10 o -2 -4 -6 -8 -1 0
VGSM, - Gate-Source Cutoff Voltage (V) Vesmm - Gate-Source Cutoff Voltage (V)
Output Characteristics Output Characteristics
VGswm = -2 V VGswm = -3 V
0 -1.4 v
0 2 4 6 8 10 0 2 4 6 8 10
Vros - Drain-Source Voltage (V) Vos - Drain-Source Voltage (V)
Document Number: 70242 www.vishay.com
S-04028-Rev. F, 04-Jun-01
2N4416l2N4416AlSST4416
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Output Characteristics
Output Characteristics
- V = O V
Vesmrr) - -2 V VGswit) = -3 V GS
Vas = 0 V
Mh2 V -0.3 V
E -0.4 E -o.ev
- 3 - 3
at) -0.6 V 0:) -0.9 V
IE 2 Mh8 V (i, 2
_D -C0 v AD
1 -1.2 v 1
-1.4 V
0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0
Vos - Drain-Source Voltage (V) Vos - Drain-Source Voltage (V)
Transfer Characteristics Transfer Characteristics
Vssom = -2 V Vos = 10 V VGSMI) = -3 V Ws = 10 V
a:" a:" TA = -55'C
E E 6 25''C
E Es 4
0 -0.4 -0.8 -1.2 -1.6 -2
Vas - Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
VGS(off) = -2 V V03 = 10 V
f= 1 kHz
gfs — Forward Transconductance (m8)
0 -0.4 -0.8 -1.2 -1.6 -2
Vss - Gate-Source Voltage (V)
gfs — Fowvard Transconductance (m8)
O -C6 -1.2 -1.8 -2.4 -3
VGS - Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltgage
VGS(off) = -3 V Vos = 10 V
f= 1 kHz
O Ah6 -1.2 -1.8 -2.4 -3
I/ss - Gate-Source Voltage (V)
www.vishay.com Document Number: 70242
7-4 S-04028-Reu. F, 04-Jun-01
VISHAY
2N4416I2N4416A/SST4416
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
On-Resistance vs. Drain Current
TA=25°C
VGS(off) = -2 V
rDS(on) — Drain-Source On-Resistance ( Q )
0.1 ID - Drain Qurrent (mA)
Common-Source Input Capacitance
vs. Gate-Source Voltage
f=1MHz
Ciss — Input Capacitance (pF)
0 -4 -8 -12 -1 6
VGS - Gate-Source Voltage (V)
Input Admittance
TA = 25°C
Vros = 15 v
I/ss = O V
Common Source
1 00 200 500
f- Frequency (MHz)
AV — Voltage Gain
Crss — Reverse Feedback Capacitance (pF)
Circuit Voltage Gain vs. Drain Current
- hs RL
V _ 1 + RLgos
Assume VDD = 15 V, VDS = 5 V
VGS(Off) = -2 V
ID - Drain Current (mA) 10
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
f=1MHz
-A -8 -1 2 -1 6 -20
V65 - Gate-Source Voltage (V)
Forward Admittance
TA = 25°C
Vos = 15 v
I/ss = O V
Common Source
200 500 1000
f- Frequency (MHz)
Document Number: 70242
S-04028-Rev. F, 04-Jun-01
www.vishay.com
2N4416l2N4416AlSST4416
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Reverse Admittance
TA = 25°C
Vos = 15 V
Vss = 0 V
Common Source
100 200 500 1000
f- Frequency (MHz)
Gate Leakage Current
100nA _
E 1Goyo--/'mAop-rCt4',,Ct',tea-'
I J/l It',',''--'
10nA l/IIA "ad
E 01mA l/Jrl/l/Z:
q, 1nA --- TA=125°C I I A/// -
3 E ’ f E
g - y y' 1/ less -
g 100pA E- @ E
"a' E 5mA // 125°C E
"l - /tst' -
_0 10PA g _ 1mA g
E AJmA E
1 A - TA=25°C I I I -
p E’ / 'Gss@25°C "-=I
0.1pA -rr" I l
0 4 8 12 16 20
VDG - Drain-Gate Voltage (V)
20 Equivalent Input Noise Voltage vs. Frequency
Vos=10V
(nVIW)
en — Noise Voltage
10 100 1 k 10 k 100 k
f - Frequency (Hz)
gfs — Forward Transconductance (m8)
905 — Output Conductance (p8)
Output Admittance
TA = 25°C
Vos = 15 v
VGS = 0 V
Common Source
100 200 500 1000
f- Frequency (MHz)
Common-Source Forward
Transconductance vs. Drain Current
VGS(off) = -3 V Vos = 10 V
f= 1 kHz
0.1 1 10
ID - Drain Current (mA)
20 Output Conductance vs. Drain Current
Vssor) = -3 v vDS = 10 v
f= 1 kHz
0.1 1 10
ID - Drain Current (mA)
www.vishay.com
Document Number: 70242
S-04028-Reu. F, 04-Jun-01
:
www.loq.com
.
