2N4410 ,Amplifier Transistor(NPN Silicon)
2N4410 ,Amplifier Transistor(NPN Silicon)
2N4410 ,Amplifier Transistor(NPN Silicon)
2N4410 ,Amplifier Transistor(NPN Silicon)
2N4410 ,Amplifier Transistor(NPN Silicon)ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2N4416 ,N-Channel JFET High Frequency Amplifier2N4416/2N4416A/SST4416Vishay SiliconixN-Channel JFETs Part Number V (V) V Min (V) g Min ..
2SC2626 ,TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHINGA-35
2SC2626 1tr::epx'''7--F5vt,vAe
hlPN'-x-gt8tftti-frf, TRIPLE DIFFUSED PLANER TYPE
mm. 35 ..
2SC2631 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SC2632 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SC2634 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC2641 ,TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)2SC2641TOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR T7QC7641'tiN...--UHF BAND POWER AMPLIFIER
2SC2641 ,TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)APPLICATIONS Unit in mmOutput Power : P0=6W(Min.)(f-- 470MHz, VCC = 12.6V, Pi = 1W)MAXIMUM RATINGS ..
2N4410
Amplifier Transistor(NPN Silicon)
2N4410 Discrete POWER & Signal Technologies 2N4410 TO-92 C B E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 80 V CEO VCBO Collector-Base Voltage 120 V V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 200 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N4410 P Total Device Dissipation 625 mW D 5.0 Derate above 25°C mW/°C Rθ Thermal Resistance, Junction to Case 83.3 °C/W JC Thermal Resistance, Junction to Ambient 200 °C/W RθJA 1997
