| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2N396A |
MOTOROLA|Motorola |
N/a |
40 |
 |
alloy-junction germanium transistors |
2N3980 TI,Silicon annular PN unijunction transistor.
2N396A , alloy-junction germanium transistors
2N3993 ,P-Channel Silicon Junction Field-Effect TransistorELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)T . Characteristic - Symbol Min Typ M ..
2N3994 ,P-Channel Silicon Junction Field-Effect TransistorELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)Characteristic Symbol Min Max l UnltO ..
2N4013 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6)
3700 3701 ..
2N4014 ,Leaded Small Signal Transistor General Purposeapplications involving pulsed or iowduty cycle operations.
3. These ratings give a maximum junct ..
2SC2463 , Low frequency amplifier. Collector-base voltage VCBO 55 V
2SC2463 , Low frequency amplifier. Collector-base voltage VCBO 55 V
2SC2466 , SILICON NPN EPITAXIAL UHF AMPLIFIER
