| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2N3947 |
MOT|Motorola |
N/a |
5000 |
 |
Bipolar NPN Device in a Hermetically sealed TO18 |
2N3954 SI , N-Channel Dual Silicon Junction Field-Effect Transistor
2N3954A MOTOROLA, a Low Noise, Low Drift, Monolithic Dual N-Channel JFET
2N3947 , Bipolar NPN Device in a Hermetically sealed TO18
2N3958 ,Low Noise, Low Drift, Monolithic Dual, N-Channel JFETS-04031—Rev. B, 04-Jun-018-4 V – VGS1 GS2A – Voltage Gain I – Drain Current (mA)V D() V/C tCMRR ..
2N3958 ,Low Noise, Low Drift, Monolithic Dual, N-Channel JFETS-04031—Rev. B, 04-Jun-018-12N3958Vishay Siliconix ..
2N3962 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6)
SYMBOL CH ..
2N3963 , Bipolar PNP Device in a Hermetically sealed TO18
2SC2463 , Low frequency amplifier. Collector-base voltage VCBO 55 V
2SC2463 , Low frequency amplifier. Collector-base voltage VCBO 55 V
2SC2466 , SILICON NPN EPITAXIAL UHF AMPLIFIER
