2N3905 ,PNP Silicon Epitaxial Planar Transistor
2N3905 ,PNP Silicon Epitaxial Planar Transistor
2N3905 ,PNP Silicon Epitaxial Planar Transistor
2N3905 ,PNP Silicon Epitaxial Planar Transistor
2N3905TF ,PNP General Purpose Amplifier2N39052N3905TO-92CBEPNP General Purpose AmplifierThis device is designed for use as general purpose ..
2N3906 ,PNP Silicon Transistor (General small signal application Switching application)http://onsemi.com2dVSTATIC (V/ s) μdtdVdVSTATIC (V/ s) μSTATIC (V/ s) μd ..
2SC2458-BL , TO-92 Plastic Package Transistors (NPN)
2SC2458-BL , TO-92 Plastic Package Transistors (NPN)
2SC2458-L ,TRANSISTOR (AUDIO/ LOW NOISE AUDIO AMPLIFIER APPLICATIONS)APPLICATIONS4.2MAX.High Current Capability :IC = 150mA (Max.)ZMAXHigh DC Current Gain: hFE = 70--70 ..
2SC2462 , Low frequency amplifier. Collector-base voltage VCBO 50 V
2SC2462 , Low frequency amplifier. Collector-base voltage VCBO 50 V
2SC2462 , Low frequency amplifier. Collector-base voltage VCBO 50 V
2N3905
PNP Silicon Epitaxial Planar Transistor
2N3905 2N3905 TO-92 C B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO VCBO Collector-Base Voltage 40 V V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 200 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N3905 P Total Device Dissipation 625 mW D 5.0 Derate above 25°C mW/°C Rθ Thermal Resistance, Junction to Case 83.3 °C/W JC Thermal Resistance, Junction to Ambient 200 °C/W RθJA 2N3905, Rev A 2001
