Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2N3766 |
MOC |
N/a |
52 |
|
Bipolar NPN Device in a Hermetically sealed TO66 |
2N3766 , Bipolar NPN Device in a Hermetically sealed TO66
2N3771 ,HIGH POWER NPN SILICON POWER TRANSISTORS2N37712N3772®HIGH POWER NPN SILICON TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPESDESCRIPTION ..
2N3771 ,HIGH POWER NPN SILICON POWER TRANSISTORSTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction ROUC 1 .25 °C/Wto ..
2N3772 ,HIGH POWER NPN SILICON POWER TRANSISTORSELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
2N3773 ,COMPLEMENTARY SILICON POWER TRANSISTORSTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, R 1.17 °C/WJCJunction−to− ..
2SC2412K T146Q , General purpose transistor (50V, 0.15A)
2SC2412K T146 R , General purpose transistor (50V, 0.15A)
2SC2412K T146Q , General purpose transistor (50V, 0.15A)