Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2N3636 |
MOT|Motorola |
N/a |
105 |
|
Bipolar PNP Device in a Hermetically sealed TO39 |
2N3636 , Bipolar PNP Device in a Hermetically sealed TO39
2N3637 ,GENERAL PURPOSE TRANSISTOR (PNP SILICON)ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2N3637 ,GENERAL PURPOSE TRANSISTOR (PNP SILICON)22N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637LPACKAGE DIMENSIONSTOï 5 3ï LeadC ..
2N3637 ,GENERAL PURPOSE TRANSISTOR (PNP SILICON)Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation ..
2N3642 , NPN SILICON SIGNAL TRANSISTORS
2SC2411K T146Q , Medium Power Transistor (32V, 0.5A)
2SC2411K T146R , Medium Power Transistor (32V, 0.5A)
2SC2411KT146R , Medium Power Transistor (32V, 0.5A)