| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2N3570 |
TI|Texas Instruments |
N/a |
31 |
 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
2N3576
2N3570 , NPN SILICON HIGH FREQUENCY TRANSISTOR
2N3585 , COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS
2N3635 ,Conductor Products, Inc. - SI PNP POWER BJT
2N3636 , Bipolar PNP Device in a Hermetically sealed TO39
2N3637 ,GENERAL PURPOSE TRANSISTOR (PNP SILICON)ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2SC2406 ,Small-signal deviceTransistors2SC2405, 2SC2406Silicon NPN epitaxial planar typeUnit: mmFor low-frequency and low-noise ..
2SC2406 ,Small-signal deviceAbsolute Maximum Ratings T = 25°C–0.05aParameter Symbol Rating Unit10˚2SC2405 V 35 VCollector-base ..
2SC2406 ,Small-signal deviceAbsolute Maximum Ratings T = 25°C–0.05aParameter Symbol Rating Unit10˚2SC2405 V 35 VCollector-base ..
