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2N3055IRN/a3avaiCOMPLEMENTARY SILICON POWER TRANSISTORS
2N3055HTOSHN/a10avaiTransistor Silicon Power NPN


2N3055H ,Transistor Silicon Power NPNMAXIMUM RATINGS COMPLEMENTARY SILICON60 VÎRating Symbol Value Unit115 WÎÎCollector−Emitter Voltage ..
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2SC2336 ,PNP/NPN SILICON EPITAXIAL TRANSISTOR2SA1006,1006A,1006B/2sC2336,2336A,2336B , 2SA1006,1006A,1006B/2SC2336,2336A,23368 PNP/NPNI. 5 ..
2SC2336A ,PNP/NPN SILICON EPITAXIAL TRANSISTOR2SA1006,1006A,1006B/2sC2336,2336A,2336B , 2SA1006,1006A,1006B/2SC2336,2336A,23368 PNP/NPNI. 5 ..


2N3055-2N3055H
COMPLEMENTARY SILICON POWER TRANSISTORS
2N3055, MJ2955
Preferred Device

Complementary Silicon
Power Transistors
...designed for general−purpose switching and amplifier
applications. DC Current Gain − hFE = 20−70 @ IC = 4 Adc Collector−Emitter Saturation Voltage −
VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area Pb−Free Package is Available
MAXIMUM RATINGS

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THERMAL CHARACTERISTICS

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Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
160 25 50 75 100 125 150 175 200
, POWER DISSIP
TION (W
TTS)
100
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