| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2N2326 |
MOT|Motorola |
N/a |
440 |
 |
SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS |
2N2351A NJS
2N2368 , Bipolar NPN Device in a Hermetically sealed TO18
2N2368A MOT
2N2369 ,NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N2326 , SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS
2N2369 ,NPN SILICON PLANAR EPITAXIAL TRANSISTORSapplications involving pulsed or low duty cycle operations.
3. These ratings give a maximum junc ..
2N2369A ,NPN SILICON PLANAR EPITAXIAL TRANSISTORSELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6)
SYMBOL CHA ..
2N2405 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6)
SYMBOL
..
2N2484 ,NPN SILICON PLANAR TRANSISTORThe documentation and process comply with this revision shall be SEMICONDUCTOR DEVICE, TRANSIS ..
2SC2223 ,HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES
q Micro package. T
0 High gain bandwidth product.' f-r = 600 MHz TYP.
E
E 0 Low ou ..
2SC2223-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta =" 25 °C)
CHARACTERISTIC SYMBOL . . . . TEST CONDITIONS
--'-
..
2SC2223-T2B ,Silicon transistorFEATURES
q Micro package. T
0 High gain bandwidth product.' f-r = 600 MHz TYP.
E
E 0 Low ou ..
