2N2218 ,Leaded Small Signal Transistor General Purposeapplicationsat collector currents up to 500 mA, and feature use-ful current gain over a wide range ..
2N2218A ,NPN SILICON PLANAR SWITCHING TRANSISTORSELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6)
SYMBOL CH ..
2N2219 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2N2221 ,Leaded Small Signal Transistor General PurposeABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-base Voltage (I =0) 60 VCBO EV Colle ..
2N2221A ,NPN SILICON PLANAR SWITCHING TRANSISTORSELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6)
PACKAGE
2 ..
2N2221A ,NPN SILICON PLANAR SWITCHING TRANSISTORSapplications involving pulsed or low duty cycle operations.
3. These ratings give a maximum junc ..
2SC2060 , 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SC2060 , 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SC2068 ,SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS)TOSHIBA IMiScRETfr/()PT01 Sl, IHIIHDH?ESU DDD?HEE l Ir/9097250 TOSHIBA (DISCRETE/OPTO) 50Q707466 D ..
2SC2073A ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SC2075 ,Silicon NPN Power Transistors TO-220 packageTOSHIBA f0ISCRfrTE/0PT0y Sl, os:Fvrizso EIE||37H7IJ 3 r9097250 TOSHTBA di:nii'bRirrE/oPTos SEC 0747 ..
2SC2078 ,NPN Epitaxial Planar Silicon Transistor 27MHz RF Power Amplifier ApplicationsOrdering number:EN462ENPN Epitaxial Planar Silicon Transistor2SC207827MHz RF Power Amplifier Applic ..
2N2218-2N2221
HIGH-SPEED SWITCHES
2N2218-2N2219
2N2221- 2N2222HIGH-SPEED SWITCHES
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value UnitVCBO Collector-base Voltage(IE =0) 60 V
VCEO Collector-emitter Voltage(IB =0) 30 V
VEBO Emitter-base Voltage(IC =0) 5 V Collector Current 0.8 A
Ptot Total Power DissipationatTamb≤25°C
for
2N2218 and
2N2219for
2N2221 and
2N2222 Tcase≤25°C
for
2N2218 and
2N2219for
2N2221 and
2N2222DESCRIPTION
TO-18TO-39
INTERNAL SCHEMATIC DIAGRAM
2N2218/2 N2219 approvedto CECC 50002-
100, 2N2221/2N2222 approvedto CECC
50002-101 availableon request.
The 2N2218, 2N2219, 2N2221 and 2N2222aresili-
con planar epitaxial NPN transistorsin Jedec
TO-39 (for 2N2218 and 2N2219) andin Jedec
TO-18(for 2N2221 and 2N2222) metal cases. They
are designedfor high-speed switching applications collector currentsupto500 mA,and feature use-
ful current gain overa wide rangeof collector cur-
rent,low leakage currents andlow saturation volt-
ages.
ELECTRICAL CHARACTERISTICS (Tamb =25°C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. UnitICBO Collector Cutoff Current
(IE =0)
VCB =50V
VCB =50V Tamb =150°C
IEBO Emitter Cutoff Current
(IC =0) VEB=3V 10 nA
V(BR)CBO Colllector-base Breakdown
Voltage(IE =0) IC =10 μA60 V
V(BR)CEO* Collector-emitter Breakdown
Voltage(IB =0) IC =10mA 30 V
V(BR)EBO Emittter-base Breakdown
Voltage(IC =0) IE =10 μA5 V
VCE(sat)* Collector-emitter Saturation
Voltage =150mA =500mA =15mA =50mA
VBE(sat)* Base-emitter Saturation
Voltage =150mA =500mA =15mA =50mA
hFE* DC Current Gain for
2N2218=0.1mA=1mA =10mA =150mA =500mA =150mA
for
2N2219=0.1mA=1mA =10mA =150mA =500mA =150mA
and
2N2221VCE =10V
VCE =10V
VCE =10V
VCE =10V
VCE =10V
VCE=1V
and
2N2222VCE =10V
VCE =10V
VCE =10V
VCE =10V
VCE =10V
VCE=1V
300 Transition Frequency IC =20mA=100 MHz VCE=20V 250 MHz
CCBO Collector-base Capacitance IE=0=100kHz VCB =10V 8 pF
Re(hie) Real Partof Input
Impedance =20mA=300 MHz VCE =20V 60 Ω Pulsed: pulse duration=300μs,duty cycle=1%.
THERMAL DATA
2N2218
2N2219
2N2221
2N2222Rth j-case
Rth j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max °C/W
187.5 °C/W
83.3 °C/W
300 °C/W
2N2218-2N2219-2N2221-2N2222
DIM. inch
MIN. TYP. MAX. MIN. TYP. MAX. 12.7 0.500 0.49 0.019 5.3 0.208 4.9 0.193 5.8 0.228 2.54 0.100 1.2 0.047 1.16 0.045
L45o 45o
E
TO-18 MECHANICAL DATA
2N2218-2N2219-2N2221-2N2222
DIM. inch
MIN. TYP. MAX. MIN. TYP. MAX. 12.7 0.500 0.49 0.019 6.6 0.260 8.5 0.334 9.4 0.370 5.08 0.200 1.2 0.047 0.9 0.035
L45o (typ.)
E
TO39 MECHANICAL DATA
2N2218-2N2219-2N2221-2N2222
Information furnishedis believedtobe accurateand reliable. However, SGS-THOMSON Microelectronics assumesno responsabilityforthe
consequencesof useofsuch informationnor forany infringementof patentsor other rightsofthird partieswhich mayresultsfromitsuse.No
license isgrantedby implication orotherwise under anypatentor patentrights ofSGS-THOMSON Microelectronics.Specificationsmentionedthis publicationare subjectto change without notice.This publicationsupersedesand replacesall information previously supplied.
SGS-THOMSON Microelectronicsproductsarenot authorizedforuse ascriticalcomponentsinlife supportdevices orsystemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics. 1994 SGS-THOMSON Microelectronics-All Rights Reserved
SGS-THOMSON Microelectronics GROUPOF COMPANIES
2N2218-2N2219-2N2221-2N2222
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