| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2MBI75S-120 |
FUJI |
N/a |
287 |
 |
IGBT MODULE |
2MBI75U4A-120 FUJI
2MBI75S-120 , IGBT MODULE
2MBI75VA-120-50 , IGBT MODULE (V series) 1200V / 75A / 2 in one package
2N1132 , Medium Current General Purpose Amplifiers and Switches
2N1132 , Medium Current General Purpose Amplifiers and Switches
2N1132B , Small Signal Transistors
2SC1927 ,NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USEDATA SHEETSILICON TRANSISTOR2SC1927NPN SILICON EPITAXIAL DUAL TRANSISTORFOR DIFFERENTIAL AMPLIFIE ..
2SC1940 ,NPN SILICON TRANSISTORFEATURES
The 28C1940 is designed for use in driver stages of audio
frequency amplifiers.
I ..
2SC1940 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL
CHARACTERISTIC
hFE1
hFE2
DC Current Gai ..
