| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2MBI150VB-120-50 |
FUJI |
N/a |
200 |
 |
IGBT MODULE (V series) 1200V / 150A / 2 in one package |
2MBI150VH-120-50 FUJI
2MBI200HH-120 FUJI
2MBI200J-060 FUJI
2MBI200J-140 FUJI
2MBI150VB-120-50 , IGBT MODULE (V series) 1200V / 150A / 2 in one package
2MBI200L-060 ,IGBT MODULE(L series)Applications
. Inverter for Motor Drive _
0 AC and DC Servo Drive Amplifier
O Uninterruptibl ..
2MBI200L-120 ,IGBT MODULE ( L series)Features
0 High Speed Switching
0 Low Saturation Voltage
q Voltage Drive
I
2MBI200N-060 ,IGBT MODULE ( N series )Applications• High Power Switching• A.C. Motor Controls• D.C. Motor Controls• Uninterruptible Power ..
2MBI200N-120 ,IGBT MODULE ( N series )Applications• High Power Switching• A.C. Motor Controls• D.C. Motor Controls• Uninterruptible Power ..
2SC1841 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 °C)
.
SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS ..
2SC1842 ,NPN SILICON TRANSISTORFEATURES . High hFE. hFE '. 600 TYP. (V¢E=6.O V, Ic=1.0 mA) (Oggxfzx)
. Low Noise Voltage. NV : ..
2SC1844 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 °C)
NPN SILICON TRANSISTOR
2SC1 844
PACKAGE DIMENSIONS
..
