Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2MBI150VA-060-50 |
FUJI |
N/a |
45 |
|
IGBT MODULE (V series) 600V / 150A / 2 in one package |
2MBI150VA-060-50 , IGBT MODULE (V series) 600V / 150A / 2 in one package
2MBI150VA-120-50 , IGBT MODULE (V series) 1200V / 150A / 2 in one package
2MBI150VB-120-50 , IGBT MODULE (V series) 1200V / 150A / 2 in one package
2MBI200L-060 ,IGBT MODULE(L series)Applications
. Inverter for Motor Drive _
0 AC and DC Servo Drive Amplifier
O Uninterruptibl ..
2MBI200L-120 ,IGBT MODULE ( L series)Features
0 High Speed Switching
0 Low Saturation Voltage
q Voltage Drive
I
2SC1841 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 °C)
.
SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS ..
2SC1842 ,NPN SILICON TRANSISTORFEATURES . High hFE. hFE '. 600 TYP. (V¢E=6.O V, Ic=1.0 mA) (Oggxfzx)
. Low Noise Voltage. NV : ..
2SC1844 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 °C)
NPN SILICON TRANSISTOR
2SC1 844
PACKAGE DIMENSIONS
..