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2KBP06MFSCN/a100avaiBridge Rectifiers
2KBP06MN/a480avaiBridge Rectifiers


2KBP06M ,Bridge RectifiersFeatures• Surge overload rating: 60 amperespeak.• Reliable low cost construction utilizingmolded pl ..
2KBP06M ,Bridge Rectifiers2KBP005M/3N253 - 2KBP10M/3N2592KBP005M/3N253 - 2KBP10M/3N259
2KBP06M ,Bridge Rectifiers28-Feb-02 12KBP005M thru 2KBP10M, 3N253 thru 3N259Vishay Semiconductorsformerly General Semiconduct ..
2KBP08M ,Bridge RectifiersFeatureso0.560 (14.22)0.125 x 45 (3.2)• Plastic package has Underwriters LaboratoryFlammability Cla ..
2KBP10G ,2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIERWmvnweDem 2KBP005G Thru 2KBP10G lit 2 AMP QL_AftS PA§SIVATED SILICON BRIDGE RECTIFIER I
2KBP10M ,Bridge RectifiersFeatureso0.560 (14.22)0.125 x 45 (3.2)• Plastic package has Underwriters LaboratoryFlammability Cla ..
2SC1740S , General purpose transistor (50V, 0.15A)
2SC1740-S , General purpose transistor (50V, 0.15A)
2SC1740-S , General purpose transistor (50V, 0.15A)
2SC1740S-R , NPN Plastic-Encapsulate Transistors
2SC1740STPR , General purpose transistor (50V, 0.15A)
2SC1741S , Medium Power Transistor (32V, 0.5A)


2KBP06M
Bridge Rectifiers
2KBP005M/3N253 - 2KBP10M/3N259 2KBP005M/3N253 - 2KBP10M/3N259 Features • Surge overload rating: 60 amperes peak. • Reliable low cost construction utilizing molded plastic technique. ~ ~ - • UL certified, UL #E111753. + KBPM Bridge Rectifiers Absolute Maximum Ratings* T = 25°C unless otherwise noted A Value 005M 01M 02M 04M 06M 08M 10M Symbol Parameter Units 253 254 255 256 257 258 259 V Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V RRM V Maximum RMS Bridge Input Voltage 35 70 140 280 420 560 700 V RMS V DC Reverse Voltage (Rated V) 50 100 200 400 600 800 1000 V R R I Average Rectified Forward Current, F(AV) 2.0 A @ T = 50°C A I Non-repetitive Peak Forward Surge Current 60 A FSM Storage Temperature Range -55 to +165 T °C stg T Operating Junction Temperature -55 to +165 °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 4.7 W D R Thermal Resistance, Junction to Ambient,* per leg 30 C/W ° θJA *Device mounted on PCB with 0.47 x 0.47" (12 x 12 mm). Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Device Units V Forward Voltage, per bridge @ 3.14 A 1.1 V F I R Reverse Current, total bridge @ rated V R 5.0 A μ T = 25°C A 500 A μ T = 125 C ° A 2 2 I t rating for fusing t < 8.35 ms 15 A s C Total Capacitance, per leg T 25 pF V = 4.0 V, f = 1.0 MHz R 2001 2KBP005/3N253-2KBP10/3N259, Rev. D
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