| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2FAF-M8R |
BOURNSINC |
N/a |
1000 |
 |
Integrated Passive & Active Devices |
| 2FAF-M8R |
BOURNS |
N/a |
121000 |
|
Integrated Passive & Active Devices |
2FAG-M12 BOURNS
2FAG-M12R BOURNS, Integrated Passive & Active Devices
2FAH-C20R , Integrated Passive & Active Device using CSP
2FAH-C20R BOURNS, Integrated Passive & Active Device using CSP
2FAF-M8R , Integrated Passive & Active Devices
2FAK-C15R , Integrated Passive & Active Device using CSP
2FAK-C15R , Integrated Passive & Active Device using CSP
2FAL-M16R , Integrated Passive & Active Devices
2FAL-M16R , Integrated Passive & Active Devices
2SC1627A ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC1653 ,DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "c)
CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS
Collector ..
2SC1653-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 "c)
CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS
Collector ..
