| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2ED300C17-ST |
INFINEON|Infineon |
N/a |
45 |
 |
Dual IGBT Driver Board For Infineon Medium and High Power IGBT Modules |
2EDG-3.81-2P ANYTEK
2EDG-3.81-3P ANYTEK
2EEA44285.2
2EG6-0002 NUOVA
2ELPBF LT
2ELPBF LINEAR
2EZ12D5 12V TS森美特
2EZ51 PANJIT, GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts)
2F LRC, RENESAS MCU R8C FAMILY / R8C/2x SERIES
2F ON, RENESAS MCU R8C FAMILY / R8C/2x SERIES
2F003200 BESTA
2-F074G EPSON
2F0H TOREX
2F10-07 UNICOM
2F16-01 UNICOM
2F3622S RFHIC
2F5R TOREX
2F5U TOREX
2F8141 HITACHI
2F8167 HITACHI
2f9ec3 QUIZIX
2ED300C17-ST , Dual IGBT Driver Board For Infineon Medium and High Power IGBT Modules
2FAD-C20R , Integrated Passive & Active Device using CSP
2FAF-M8R , Integrated Passive & Active Devices
2FAF-M8R , Integrated Passive & Active Devices
2FAK-C15R , Integrated Passive & Active Device using CSP
2SC1623-T2B ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC1623NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
2SC1624 ,Silicon NPN Power Transistors TO-220 package-cicTiTEirCkTirsceiimiv0"0ir Si, olulcuo'ri'iesiio unmugg 3 Ih"ith'Iritli,'SlLlCONNPNPLANARTYPE2301 ..
2SC1627A ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
