| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 27C256-10 |
TI|Texas Instruments |
N/a |
3000 |
 |
256K-BIT [32K x 8] CMOS EPROM |
27C256-100FA
27C256-115FA S
27C256-12 S, 256K-BIT [32K x 8] CMOS EPROM
27C256-12 TI, 256K-BIT [32K x 8] CMOS EPROM
27C256-12 ST, 256K-BIT [32K x 8] CMOS EPROM
27C256-12 HD, 256K-BIT [32K x 8] CMOS EPROM
27C256-12 MICRCL, 256K-BIT [32K x 8] CMOS EPROM
27C256-12/J MICROCHI
27C256-12/J Microchip
27C256-12/L MICROCHIP
27C256-12/P MICROCHIP
27C256-12/SO MICROCHIP
27C256-120 S
27C256-120FA ASI
27C256120N S
27C256-12D PHI,2-7 V, 256K-bit CMOS EPROM (32Kx8)
27C256-10 , 256K-BIT [32K x 8] CMOS EPROM
27C256-12FA ,2-7 V, 256K-bit CMOS EPROM (32Kx8)
27C256-12FA ,2-7 V, 256K-bit CMOS EPROM (32Kx8)
27C256-15D ,2-7 V, 256K-bit CMOS EPROM (32Kx8)
27C256-20A ,2-7 V, 256K-bit CMOS EPROM (32Kx8)
2SA984-K , LOW FREQUENCY POWER AMP APPLICATIONS
2SA988 ,PNP SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 °C)
SYMBOL CHARACTERISTlC MIN. TYP. MAX. UNIT
DC Current Ga ..
2SA992 ,PNP SILICON TRANSISTORFEATURES . High Voltage. VCEO I -120 V 52 MAX.
0 Low Output Capacitance. Cob : 2.0 pF TYP. (VCB =- ..
