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Partno	Mfg	Dc	Qty	Available	Descript
2743019447	FAIR-RITE	N/a	369930		RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
2743019447	FAIR|Fairchild Semiconductor	N/a	3326		RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

2743019447L FAIR-RITE
2743019447L
2743019447M FAIR-RITE
2743019447M
274301P447 xx
2743021447 , RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
2743021447 FAIR-RITE, RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
2743021447L FAIR-RITE
2743019447 , RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
2743037447 ,Rite Products Corp. - 43 SM BEAD
2743037447 ,Rite Products Corp. - 43 SM BEAD
2743037447 ,Rite Products Corp. - 43 SM BEAD
2743037447 ,Rite Products Corp. - 43 SM BEAD
2SA675(A)-T ,Silicon transistor
2SA683 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit2SA0683 V −30 VCollector-base voltag ..
2SA683 ,Small-signal deviceTransistors2SA0683, 2SA0684 (2SA683, 2SA684)Silicon PNP epitaxial planar typeUnit: mm5.9±0.2 4.9±0. ..