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20ETF10SIRN/a89avai1000V Fast Recovery Diode in a D2-Pak package
20ETF12SIRN/a195avai1200V Fast Recovery Diode in a D2-Pak package


20ETF12S ,1200V Fast Recovery Diode in a D2-Pak packageFeaturesThe 20ETF..S fast soft recovery QUIETIR rectifierseries has been optimized for combined sho ..
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20ETF10S-20ETF12S
800V Fast Recovery Diode in a D2-Pak package
12128 rev. A 01/2000
International QUIETIR Series
15.3% Rectifier 20ETF..S HV
FAST SOFT RECOVERY
RECTIFIER DIODE VF < 1.31V @ 20A
IFSM = 355A
vRRM 800 to 1200V
Description/Features
The 20ETF..S fast soft recovery QUIETIR rectifier
series has been optimized for combined short
reverse recovery time and low forward voltage drop.
The glass passivation ensures stable reliable
operation in the most severe temperature and power
cycling conditions.
Typical applications are both:
I: output rectification and freewheeling in
inverters, choppers and converters
u and input rectifications where severe
restrictions on conducted EMI should be met.
Major Ratings and Characteristics Package Outline
Characteristics 20ETF..S Units
IHAV) Sinusoidalwaveform 20 A
VRRM range 800to 1200 V
|FSM 355 A
VF @20A,TJ=25°C 1.31 v
trr @1A,100A/ps 95 ns
D2 Pak (SMD-220)
T J range -40to 150 (
20ETF..S HV QUIETIR Series International
I2128 rev.A 01/2000 IEER Rectifier
Voltage Ratings
VRHM , maximum VRSM, maximum non repetitive IRRM
Part Number peak reverse voltage peak reverse voltage 150°C
V V mA
20ETF08S 800 900
20ETF1OS 1000 1100 6
20ETF12S 1200 1300
Absolute Maximum Ratings
Parameters 20ETF..S Units Conditions
IFW) Max.AverageForwardCurrent 20 A @TC=97°C,180°conductionhalfsinewave
|FSM Max.PeakOneCycIeNon-Repetitive 300 A 10msSinepulse,ratedVrmMapplied
SurgeCurrent 355 10msSine pulse, novoltagereapplied
I2t Max. |2tforfusing 450 A25 10msSinepulse,ratedVRRMapplied
635 10msSinepulse,novoltagereapplied
|th Max. fNtforfusing 6350 A2\/s t=0.1to10ms,novoltagereapplied
Electrical Specifications
Parameters 20ETF..S Units Conditions
v,,, Max. Forward Voltage Drop 1.31 V @ 20A, T, = 25°C
r, Forward slope resistance 11.88 mn
T J = 150°C
VFUO) Threshold voltage 0.93 V
I Max. Reverse Leaka eCurrent 0.1 T = 25 ''C
RM g mA J v,, = rated Vma,
6 T J = 150 ''C
Recovery Characteristics
Parameters 20ETF..S Units Conditions
trr Reverse Recovery Time 400 ns IF @ 20Apk
|rr Reverse Recovery Current 6.1 A © 25A/ us
Qrr Reverse Recovery Charge 1.7 pC © 25°C
S Snap Factor tb/ta 0.6 typical
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