1SS424 ,Small-signal Schottky barrier diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
1SS426 ,Switching diodeElectrical Characteristics (Ta = 25°C) TestCharacteristics Symbol Test Condition Min Typ. Max UnitC ..
1SS427 ,Switching diodeAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 ) ) ) )a ..
1SS81 , Silicon Epitaxial Planar Diode for High Voltage Switching
1SS81 , Silicon Epitaxial Planar Diode for High Voltage Switching
1SS82 , Silicon Epitaxial Planar Diode for High Voltage Switching
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SS424
Small-signal Schottky barrier diode
1SS424 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS424 High-Speed Switching Applications Low forward voltage : VF (3) = 0.50 V (typ.)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Mounted on a glass-epoxy circuit board of 20 × 20 mm,
pad dimensions of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Equivalent Circuit (Top View) Marking Weight: 1.4 mg (typ.)
Unit: mm
