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1SS423TOSHIBAN/a27000avaiSmall-signal Schottky barrier diode


1SS423 ,Small-signal Schottky barrier diodeElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitV I = ..
1SS424 ,Small-signal Schottky barrier diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
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1SS423
Small-signal Schottky barrier diode
1SS423 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS423

Ultra-High-Speed Switching Applications
• Small package Low forward voltage: VF (3) = 0.56 V (typ.) Low reverse current: IR = 5 μA (max)
Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: This is the absolute maximum rating for a single diode. Where two diodes are used, the absolute maximum rating per diode is 75% that for the single diode.
Electrical Characteristics (Ta = 25°C)

Marking

Weight: 0.0024 g (typ.)
Unit: mm
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