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1SS401TOSHN/a282avaiDiode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications


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1SS401
Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications
1SS401
TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type
1SS401

High Speed Switching Applications Low forward voltage : VF (3) = 0.38 V (typ.) Low reverse current : IR = 50µA (max) Small total capacitance : CT = 46 pF (typ.)
Maximum Ratings (Ta = 25°C)

Electrical Characteristics (Ta = 25°C)

VF (1) ―
Pin Assignment (Top View) Marking

Weigh: 0.006 g
000707EAA2
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