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1SS398TOSHIBAN/a3000avaiDiode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
1SS398TOSN/a130avaiDiode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications


1SS398 ,Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching ApplicationsApplications Unit: mm Low forward voltage : V = 1.0V (typ.) F High voltage : V = 400V (min) R ..
1SS398 ,Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching
1SS399 ,Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching
1SS399 ,Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching ApplicationsApplications Unit: mm Low forward voltage : V = 1.0V (typ.) F High voltage : V = 400V (min.) ..
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1SS398
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode
1SS398

High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V (typ.) High voltage : VR = 400V (min) Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance : CT = 2.5pF (typ.) Small package : SC-59
Maximum Ratings (Ta = 25°C)
: Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C)

Weight: 0.012g
Unit: mm
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