1SS379 ,Diode Silicon Epitaxial Planar Type General Purpose Rectifier ApplicationsApplications Unit in mm Low forward voltage : V = 1.0V (typ.) F Low reverse current : I = 0.1 ..
1SS381 ,Diode Silicon Epitaxial Planar Type VHF Tuner Band Switch ApplicationsApplications Unit: mm Small package Small total capacitance: C = 1.2 pF (max) T Low serie ..
1SS382 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application ..
1SS383 ,40V Dual Schottky Diode1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switc ..
1SS384 ,Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switc ..
1SS385 ,Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching1SS385 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching Unit: m ..
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SS379
Diode Silicon Epitaxial Planar Type General Purpose Rectifier Applications
1SS379 TOSHIBA Diode Silicon Epitaxial Planar Type
1SS379 General Purpose Rectifier Applications Low forward voltage : VF = 1.0V (typ.) Low reverse current : IR = 0.1nA (typ.) Small total capacitance : CT = 3.0pF (typ.) Small package : SC-59
Maximum Ratings (Ta = 25°C) *: Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C) ― IF = 100mA
Equivalent Circuit (Top View)
Marking Weight: 0.012g
Unit in mm
