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1SS374TOSN/a3000avaiDiode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application


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1SS374
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application
1SS374 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS374

High Speed Switching Application Small package Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
Maximum Ratings (Ta = 25°C)
Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C)

Marking

Weight: 0.012g
Unit: mm
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